Name: TSM4N60ECH C5G
Brand: Taiwan Semiconductor Corporation
SKU: TSM4N60ECH C5G
Availability: InStock

REF: TSM4N60ECH C5G Taiwan Semiconductor Corporation

TSM4N60ECH C5G

MOSFET N-CHANNEL 600V 4A TO251

TSM4N60ECH C5G is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CHANNEL 600V 4A TO251. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

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In Stock: 2,775

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	545 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	86.2W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251 (IPAK)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA