TSM3N80CI C0G - Taiwan Semiconductor Corporation - Transistors - FETs, MOSFETs - Single
REF: TSM3N80CI C0G Taiwan Semiconductor Corporation
TSM3N80CI C0G

Taiwan Semiconductor Corporation

MOSFET N-CH 800V 3A ITO220AB

TSM3N80CI C0G is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CH 800V 3A ITO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack, Isolated Tab.

In Stock: 9,646

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds696 pF @ 25 V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220AB
Package / CaseTO-220-3 Full Pack, Isolated Tab

Need a Quote for TSM3N80CI C0G?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →