Name: TSM2NB65CH X0G
Brand: Taiwan Semiconductor Corporation
SKU: TSM2NB65CH X0G
Availability: InStock

REF: TSM2NB65CH X0G Taiwan Semiconductor Corporation

TSM2NB65CH X0G

MOSFET N-CHANNEL 650V 2A TO251

TSM2NB65CH X0G is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CHANNEL 650V 2A TO251. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Stub Leads, IPak.

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In Stock: 4,320

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	390 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	65W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251 (IPAK)
Package / Case	TO-251-3 Stub Leads, IPak