Name: TSM130NB06LCR
Brand: Taiwan Semiconductor Corporation
SKU: TSM130NB06LCR
Availability: InStock

REF: TSM130NB06LCR Taiwan Semiconductor Corporation

TSM130NB06LCR

MOSFET N-CH 60V 10A/51A 8PDFN

TSM130NB06LCR is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CH 60V 10A/51A 8PDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN.

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In Stock: 9,178

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2175 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PDFN (5x6)
Package / Case	8-PowerTDFN