Name: TSM120N10PQ56 RLG
Brand: Taiwan Semiconductor Corporation
SKU: TSM120N10PQ56 RLG
Availability: InStock

REF: TSM120N10PQ56 RLG Taiwan Semiconductor Corporation

TSM120N10PQ56 RLG

Taiwan Semiconductor Corporation

MOSFET N-CH 100V 58A 8PDFN

TSM120N10PQ56 RLG is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CH 100V 58A 8PDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 1,933

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	12mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	145 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3902 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	36W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PDFN (5x6)
Package / Case	8-PowerTDFN