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TSM120N06LCR RLG

In Stock: 5,915
TSM120N06LCR RLG - Taiwan Semiconductor Corporation - Transistors - FETs, MOSFETs - Single
REF: TSM120N06LCR RLG Taiwan Semiconductor Corporation
TSM120N06LCR RLG

Taiwan Semiconductor Corporation

MOSFET N-CH 60V 54A 8PDFN

TSM120N06LCR RLG is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CH 60V 54A 8PDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 5,915

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2116 pF @ 30 V
FET Feature-
Power Dissipation (Max)69W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PDFN (5x6)
Package / Case8-PowerTDFN

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