TSM110NB04LCR RLG

In Stock: 2,490
TSM110NB04LCR RLG - Taiwan Semiconductor Corporation - Transistors - FETs, MOSFETs - Single
REF: TSM110NB04LCR RLG Taiwan Semiconductor Corporation
TSM110NB04LCR RLG

Taiwan Semiconductor Corporation

MOSFET N-CH 40V 12A/54A 8PDFN

TSM110NB04LCR RLG is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CH 40V 12A/54A 8PDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN.

In Stock: 2,490

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1269 pF @ 20 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PDFN (5x6)
Package / Case8-PowerTDFN

Need a Quote for TSM110NB04LCR RLG?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →