Name: TSM10N80CZ C0G
Brand: Taiwan Semiconductor Corporation
SKU: TSM10N80CZ C0G
Availability: InStock

REF: TSM10N80CZ C0G Taiwan Semiconductor Corporation

TSM10N80CZ C0G

MOSFET N-CH 800V 9.5A TO220

TSM10N80CZ C0G is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CH 800V 9.5A TO220. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 5,696

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.05Ohm @ 4.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	53 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2336 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	290W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3