Name: TSM061NA03CV RGG
Brand: Taiwan Semiconductor Corporation
SKU: TSM061NA03CV RGG
Availability: InStock

REF: TSM061NA03CV RGG Taiwan Semiconductor Corporation

TSM061NA03CV RGG

Taiwan Semiconductor Corporation

MOSFET N-CH 30V 66A 8PDFN

TSM061NA03CV RGG is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CH 30V 66A 8PDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerWDFN.

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In Stock: 1,474

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.1mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.3 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1136 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	44.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PDFN (3.1x3.1)
Package / Case	8-PowerWDFN