Name: TSM052N06PQ56 RLG
Brand: Taiwan Semiconductor Corporation
SKU: TSM052N06PQ56 RLG
Availability: InStock

REF: TSM052N06PQ56 RLG Taiwan Semiconductor Corporation

TSM052N06PQ56 RLG

Taiwan Semiconductor Corporation

MOSFET N-CH 60V 100A 8PDFN

TSM052N06PQ56 RLG is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CH 60V 100A 8PDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 6,063

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V

Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	3686 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PDFN (5x6)
Package / Case	8-PowerTDFN