Name: TSM048NB06LCR RLG
Brand: Taiwan Semiconductor Corporation
SKU: TSM048NB06LCR RLG
Price: 4.00 USD
Availability: InStock

REF: TSM048NB06LCR RLG Taiwan Semiconductor Corporation

TSM048NB06LCR RLG

Taiwan Semiconductor Corporation

MOSFET N-CH 60V 16A/107A 8PDFN

TSM048NB06LCR RLG is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CH 60V 16A/107A 8PDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN.

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In Stock: 1,083

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	16A (Ta), 107A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6253 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PDFN (5x6)
Package / Case	8-PowerTDFN