STD6NM60N-1 - STMicroelectronics - Transistors - FETs, MOSFETs - Single
REF: STD6NM60N-1 STMicroelectronics
STD6NM60N-1

STMicroelectronics

MOSFET N-CH 600V 4.6A IPAK

STD6NM60N-1 is a Transistors - FETs, MOSFETs - Single manufactured by STMicroelectronics. MOSFET N-CH 600V 4.6A IPAK. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

In Stock: 7,884

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs920mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds420 pF @ 50 V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251 (IPAK)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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