Name: STB12NM60N-1
Brand: STMicroelectronics
SKU: STB12NM60N-1
Availability: InStock

REF: STB12NM60N-1 STMicroelectronics

STB12NM60N-1

MOSFET N-CH 600V 10A I2PAK

STB12NM60N-1 is a Transistors - FETs, MOSFETs - Single manufactured by STMicroelectronics. MOSFET N-CH 600V 10A I2PAK. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

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In Stock: 5,904

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	410mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30.5 nC @ 10 V

Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	960 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	90W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA