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SCTWA90N65G2V

In Stock: 5,967
SCTWA90N65G2V - STMicroelectronics - Transistors - FETs, MOSFETs - Single
REF: SCTWA90N65G2V STMicroelectronics
SCTWA90N65G2V

STMicroelectronics

SILICON CARBIDE POWER MOSFET 650

SCTWA90N65G2V is a Transistors - FETs, MOSFETs - Single manufactured by STMicroelectronics. SILICON CARBIDE POWER MOSFET 650. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 200°C (TJ), package / case TO-247-3.

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In Stock: 5,967

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C119A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs157 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3380 pF @ 400 V
FET Feature-
Power Dissipation (Max)565W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 Long Leads
Package / CaseTO-247-3

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