Name: SCTWA20N120
Brand: STMicroelectronics
SKU: SCTWA20N120
Price: 17.79 USD
Availability: InStock

REF: SCTWA20N120 STMicroelectronics

SCTWA20N120

IC POWER MOSFET 1200V HIP247

SCTWA20N120 is a Transistors - FETs, MOSFETs - Single manufactured by STMicroelectronics. IC POWER MOSFET 1200V HIP247. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 200°C (TJ), package / case TO-247-3.

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In Stock: 593

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	239mOhm @ 10A, 20V
Vgs(th) (Max) @ Id	3.5V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 20 V

Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	175W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™ Long Leads
Package / Case	TO-247-3