Name: SCTWA10N120
Brand: STMicroelectronics
SKU: SCTWA10N120
Price: 10.93 USD
Availability: InStock

REF: SCTWA10N120 STMicroelectronics

SCTWA10N120

IC POWER MOSFET 1200V HIP247

SCTWA10N120 is a Transistors - FETs, MOSFETs - Single manufactured by STMicroelectronics. IC POWER MOSFET 1200V HIP247. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 200°C (TJ), package / case TO-247-3.

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In Stock: 600

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id	3.5V @ 250µA (Typ)
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 20 V

Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	300 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™ Long Leads
Package / Case	TO-247-3