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SCTW40N120G2V

In Stock: 2,939
SCTW40N120G2V - STMicroelectronics - Transistors - FETs, MOSFETs - Single
REF: SCTW40N120G2V STMicroelectronics
SCTW40N120G2V

STMicroelectronics

SILICON CARBIDE POWER MOSFET 120

SCTW40N120G2V is a Transistors - FETs, MOSFETs - Single manufactured by STMicroelectronics. SILICON CARBIDE POWER MOSFET 120. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 200°C (TJ), package / case TO-247-3.

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In Stock: 2,939

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 18V
Vgs(th) (Max) @ Id4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs61 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds1233 pF @ 800 V
FET Feature-
Power Dissipation (Max)278W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3

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