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SCTL90N65G2V

In Stock: 8,116
SCTL90N65G2V - STMicroelectronics - Transistors - FETs, MOSFETs - Single
REF: SCTL90N65G2V STMicroelectronics
SCTL90N65G2V

STMicroelectronics

SILICON CARBIDE POWER MOSFET 650

SCTL90N65G2V is a Transistors - FETs, MOSFETs - Single manufactured by STMicroelectronics. SILICON CARBIDE POWER MOSFET 650. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerVDFN.

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In Stock: 8,116

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs24mOhm @ 40A, 18V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs157 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3380 pF @ 400 V
FET Feature-
Power Dissipation (Max)935W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (8x8) HV
Package / Case8-PowerVDFN

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