SCTH90N65G2V-7 - STMicroelectronics - Transistors - FETs, MOSFETs - Single
REF: SCTH90N65G2V-7 STMicroelectronics
SCTH90N65G2V-7

STMicroelectronics

SICFET N-CH 650V 90A H2PAK-7

SCTH90N65G2V-7 is a Transistors - FETs, MOSFETs - Single manufactured by STMicroelectronics. SICFET N-CH 650V 90A H2PAK-7. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA.

In Stock: 4,636

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs157 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 400 V
FET Feature-
Power Dissipation (Max)330W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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