Name: SCTH60N120G2-7
Brand: STMicroelectronics
SKU: SCTH60N120G2-7
Price: 26.05 USD
Availability: InStock

REF: SCTH60N120G2-7 STMicroelectronics

SCTH60N120G2-7

STMicroelectronics

PTD WBG & POWER RF

SCTH60N120G2-7 is a Transistors - FETs, MOSFETs - Single manufactured by STMicroelectronics. PTD WBG & POWER RF. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA.

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In Stock: 6,977

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	94 nC @ 18 V

Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1969 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	390W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	H2PAK-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA