Name: SCT10N120H
Brand: STMicroelectronics
SKU: SCT10N120H
Availability: InStock

REF: SCT10N120H STMicroelectronics

SCT10N120H

SICFET N-CH 1200V 12A H2PAK-2

SCT10N120H is a Transistors - FETs, MOSFETs - Single manufactured by STMicroelectronics. SICFET N-CH 1200V 12A H2PAK-2. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 200°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 8,920

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 20 V

Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	H2Pak-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB