SCT040H65G3AG - STMicroelectronics - Transistors - FETs, MOSFETs - Single
REF: SCT040H65G3AG STMicroelectronics
SCT040H65G3AG

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE

SCT040H65G3AG is a Transistors - FETs, MOSFETs - Single manufactured by STMicroelectronics. AUTOMOTIVE-GRADE SILICON CARBIDE. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA.

In Stock: 150

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs55mOhm @ 20A, 18V
Vgs(th) (Max) @ Id4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs39.5 nC @ 18 V
Vgs (Max)+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 400 V
FET Feature-
Power Dissipation (Max)221W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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