2N3501 - Solid State Inc. - Transistors - Bipolar (BJT) - RF
REF: 2N3501 Solid State Inc.
2N3501

Solid State Inc.

BI-POLAR SILICON TRANSISTOR NPN

2N3501 is a Transistors - Bipolar (BJT) - RF manufactured by Solid State Inc.. BI-POLAR SILICON TRANSISTOR NPN. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), package / case TO-205AD, TO-39-3 Metal Can, current - collector (ic) (max) 300mA.

In Stock: 8,886

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)150V
Frequency - Transition150MHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Current - Collector (Ic) (Max)300mA
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39

Need a Quote for 2N3501?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →