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BFU660F,115

In Stock: 11,853
BFU660F,115 - NXP USA Inc. - Transistors - Bipolar (BJT) - RF
REF: BFU660F,115 NXP USA Inc.
BFU660F,115

NXP USA Inc.

RF TRANS NPN 5.5V 21GHZ 4DFP

BFU660F,115 is a Transistors - Bipolar (BJT) - RF manufactured by NXP USA Inc.. RF TRANS NPN 5.5V 21GHZ 4DFP. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-343F, current - collector (ic) (max) 60mA.

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In Stock: 11,853

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5.5V
Frequency - Transition21GHz
Noise Figure (dB Typ @ f)0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
Gain12dB ~ 21dB
Power - Max225mW
DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 10mA, 2V
Current - Collector (Ic) (Max)60mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-343F
Supplier Device Package4-DFP

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