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2SA1669-TB-E

In Stock: 3,751
2SA1669-TB-E - Sanyo - Transistors - Bipolar (BJT) - RF
REF: 2SA1669-TB-E Sanyo
2SA1669-TB-E

Sanyo

PNP EPITAXIAL PLANAR SILICON

2SA1669-TB-E is a Transistors - Bipolar (BJT) - RF manufactured by Sanyo. PNP EPITAXIAL PLANAR SILICON. Key specifications: mounting type Surface Mount, package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 50mA, power - max 250mW.

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In Stock: 3,751

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition3GHz
Noise Figure (dB Typ @ f)2dB @ 900MHz
Gain5dB
Power - Max250mW
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 5mA, 10V
Current - Collector (Ic) (Max)50mA
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device Package3-CP

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