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MX0912B251Y

In Stock: 777
MX0912B251Y - Rochester Electronics, LLC - Transistors - Bipolar (BJT) - RF
REF: MX0912B251Y Rochester Electronics, LLC
MX0912B251Y

Rochester Electronics, LLC

MX0912B251Y - NPN SILICON RF POW

MX0912B251Y is a Transistors - Bipolar (BJT) - RF manufactured by Rochester Electronics, LLC. MX0912B251Y - NPN SILICON RF POW. Key specifications: mounting type Chassis Mount, package / case SOT-439A, current - collector (ic) (max) 15A, power - max 690W.

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In Stock: 777

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Frequency - Transition1.215GHz
Noise Figure (dB Typ @ f)-
Gain8dB
Power - Max690W
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)15A
Operating Temperature-
Mounting TypeChassis Mount
Package / CaseSOT-439A
Supplier Device PackageCDFM2

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