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UPA2826T1S-E2-AT

In Stock: 3,613
UPA2826T1S-E2-AT - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: UPA2826T1S-E2-AT Renesas Electronics America Inc
UPA2826T1S-E2-AT

Renesas Electronics America Inc

8P HWSON

UPA2826T1S-E2-AT is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. 8P HWSON. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case 8-PowerWDFN.

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In Stock: 3,613

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C27A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 8V
Rds On (Max) @ Id, Vgs4.3mOhm @ 13.5A, 8V
Vgs(th) (Max) @ Id1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs37 nC @ 4 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds3610 pF @ 10 V
FET Feature-
Power Dissipation (Max)20W (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package8-HWSON (3.3x3.3)
Package / Case8-PowerWDFN

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