Name: UPA2813T1L-E2-AT
Brand: Renesas Electronics America Inc
SKU: UPA2813T1L-E2-AT
Availability: InStock

REF: UPA2813T1L-E2-AT Renesas Electronics America Inc

UPA2813T1L-E2-AT

Renesas Electronics America Inc

MOSFET P-CH 30V 27A 8HWSON

UPA2813T1L-E2-AT is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET P-CH 30V 27A 8HWSON. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 1,335

Specifications

17 parameters

Product Status	Last Time Buy
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.2mOhm @ 27A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3130 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HWSON (3.3x3.3)
Package / Case	8-PowerVDFN