Name: UPA2812T1L-E1-AT
Brand: Renesas Electronics America Inc
SKU: UPA2812T1L-E1-AT
Availability: InStock

REF: UPA2812T1L-E1-AT Renesas Electronics America Inc

UPA2812T1L-E1-AT

Renesas Electronics America Inc

MOSFET P-CH 30V 30A 8HVSON

UPA2812T1L-E1-AT is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET P-CH 30V 30A 8HVSON. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 2,716

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3740 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta), 52W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HVSON (3.3x3.3)
Package / Case	8-PowerVDFN