Name: RQJ0305EQDQS#H1
Brand: Renesas Electronics America Inc
SKU: RQJ0305EQDQS#H1
Availability: InStock

REF: RQJ0305EQDQS#H1 Renesas Electronics America Inc

RQJ0305EQDQS#H1

MOSFET P-CH 30V 3.4A UPAK

RQJ0305EQDQS#H1 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET P-CH 30V 3.4A UPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case TO-243AA.

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In Stock: 5,530

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	140mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 4.5 V

Vgs (Max)	+8V, -12V
Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	UPAK
Package / Case	TO-243AA