RJL6018DPK-00#T0 - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: RJL6018DPK-00#T0 Renesas Electronics America Inc
RJL6018DPK-00#T0

Renesas Electronics America Inc

MOSFET N-CH 600V 27A TO3P

RJL6018DPK-00#T0 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 600V 27A TO3P. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-3P-3, SC-65-3.

In Stock: 2,278

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C27A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs265mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs98 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3830 pF @ 25 V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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