Name: RJL6013DPE-WS#J3
Brand: Renesas Electronics America Inc
SKU: RJL6013DPE-WS#J3
Availability: InStock

REF: RJL6013DPE-WS#J3 Renesas Electronics America Inc

RJL6013DPE-WS#J3

Renesas Electronics America Inc

MOSFET N-CH 600V 11A 4LDPAK

RJL6013DPE-WS#J3 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 600V 11A 4LDPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case SC-83.

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In Stock: 8,248

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	810mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	LDPAK
Package / Case	SC-83