RJK60S7DPK-M0#T0 - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: RJK60S7DPK-M0#T0 Renesas Electronics America Inc
RJK60S7DPK-M0#T0

Renesas Electronics America Inc

MOSFET N-CH 600V 30A TO3PSG

RJK60S7DPK-M0#T0 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 600V 30A TO3PSG. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-3P-3, SC-65-3.

In Stock: 65

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)+30V, -20V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 25 V
FET FeatureSuper Junction
Power Dissipation (Max)227.2W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PSG
Package / CaseTO-3P-3, SC-65-3

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