RJK6026DPE-00#J3 - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: RJK6026DPE-00#J3 Renesas Electronics America Inc
RJK6026DPE-00#J3

Renesas Electronics America Inc

MOSFET N-CH 600V 5A 4LDPAK

RJK6026DPE-00#J3 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 600V 5A 4LDPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-83.

In Stock: 5,827

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 25 V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLDPAK
Package / CaseSC-83

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