RJK6024DPD-00#J2 - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: RJK6024DPD-00#J2 Renesas Electronics America Inc
RJK6024DPD-00#J2

Renesas Electronics America Inc

N-CHANNEL POWER MOSFET

RJK6024DPD-00#J2 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. N-CHANNEL POWER MOSFET. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 3,000

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs42Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs4.3 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds37.5 pF @ 25 V
FET Feature-
Power Dissipation (Max)27.2W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMP-3A
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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