RJK6002DPD-WS#J2 - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: RJK6002DPD-WS#J2 Renesas Electronics America Inc
RJK6002DPD-WS#J2

Renesas Electronics America Inc

MOSFET N-CH 600V 2A MP3A

RJK6002DPD-WS#J2 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 600V 2A MP3A. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 7,418

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs6.2 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds165 pF @ 25 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageMP-3A
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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