Name: RJK2009DPM-00#T0
Brand: Renesas Electronics America Inc
SKU: RJK2009DPM-00#T0
Availability: InStock

REF: RJK2009DPM-00#T0 Renesas Electronics America Inc

RJK2009DPM-00#T0

Renesas Electronics America Inc

MOSFET N-CH 200V 40A TO3PFM

RJK2009DPM-00#T0 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 200V 40A TO3PFM. Key specifications: mounting type Through Hole, package / case TO-220-3 Full Pack.

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In Stock: 9,861

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	36mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	TO-3PFM
Package / Case	TO-220-3 Full Pack