Name: RJK2006DPE-00#J3
Brand: Renesas Electronics America Inc
SKU: RJK2006DPE-00#J3
Availability: InStock

REF: RJK2006DPE-00#J3 Renesas Electronics America Inc

RJK2006DPE-00#J3

Renesas Electronics America Inc

MOSFET N-CH 200V 40A 4LDPAK

RJK2006DPE-00#J3 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 200V 40A 4LDPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-83.

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In Stock: 4,608

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	59mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LDPAK
Package / Case	SC-83