Name: RJK1003DPN-E0#T2
Brand: Renesas Electronics America Inc
SKU: RJK1003DPN-E0#T2
Availability: InStock

REF: RJK1003DPN-E0#T2 Renesas Electronics America Inc

RJK1003DPN-E0#T2

Renesas Electronics America Inc

MOSFET N-CH 100V 50A TO220AB

RJK1003DPN-E0#T2 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 100V 50A TO220AB. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3.

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In Stock: 4,390

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4150 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3