RJK0629DPE-00#J3 - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: RJK0629DPE-00#J3 Renesas Electronics America Inc
RJK0629DPE-00#J3

Renesas Electronics America Inc

MOSFET N-CH 60V 85A 4LDPAK

RJK0629DPE-00#J3 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 60V 85A 4LDPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-83.

In Stock: 7,830

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C85A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 43A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs85 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4100 pF @ 10 V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLDPAK
Package / CaseSC-83

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