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RJK03E0DNS-00#J5

In Stock: 140,000
RJK03E0DNS-00#J5 - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: RJK03E0DNS-00#J5 Renesas Electronics America Inc
RJK03E0DNS-00#J5

Renesas Electronics America Inc

POWER FIELD-EFFECT TRANSISTOR

RJK03E0DNS-00#J5 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. POWER FIELD-EFFECT TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerWDFN.

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In Stock: 140,000

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs15.2 nC @ 4.5 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds3050 pF @ 10 V
FET Feature-
Power Dissipation (Max)20W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HWSON (3.3x3.3)
Package / Case8-PowerWDFN

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