Name: RJK0331DPB-01#J0
Brand: Renesas Electronics America Inc
SKU: RJK0331DPB-01#J0
Availability: InStock

REF: RJK0331DPB-01#J0 Renesas Electronics America Inc

RJK0331DPB-01#J0

Renesas Electronics America Inc

POWER FIELD-EFFECT TRANSISTOR

RJK0331DPB-01#J0 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. POWER FIELD-EFFECT TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-100, SOT-669.

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In Stock: 4,801

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	3.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 4.5 V

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	3380 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	50W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK
Package / Case	SC-100, SOT-669