Name: NP82N04NDG-S18-AY
Brand: Renesas Electronics America Inc
SKU: NP82N04NDG-S18-AY
Price: 2.16 USD
Availability: InStock

REF: NP82N04NDG-S18-AY Renesas Electronics America Inc

NP82N04NDG-S18-AY

Renesas Electronics America Inc

MOSFET N-CH 40V 82A TO262-3

NP82N04NDG-S18-AY is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 40V 82A TO262-3. Key specifications: mounting type Through Hole, operating temperature 175°C (TJ), package / case TO-262-3 Full Pack, I²Pak.

Datasheet Request a Quote

In Stock: 7,847

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	4.2mOhm @ 41A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	9 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 143W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262-3
Package / Case	TO-262-3 Full Pack, I²Pak