NP50P03YDG-E1-AY - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: NP50P03YDG-E1-AY Renesas Electronics America Inc
NP50P03YDG-E1-AY

Renesas Electronics America Inc

MOSFET P-CH 30V 50A 8HSON

NP50P03YDG-E1-AY is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET P-CH 30V 50A 8HSON. Key specifications: mounting type Surface Mount, operating temperature 175°C (TJ), package / case 8-SMD, Flat Lead Exposed Pad.

In Stock: 1,721

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs8.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs96 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3500 pF @ 25 V
FET Feature-
Power Dissipation (Max)1W (Ta), 102W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSON
Package / Case8-SMD, Flat Lead Exposed Pad

Need a Quote for NP50P03YDG-E1-AY?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →