NP36P04KDG-E1-AY - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: NP36P04KDG-E1-AY Renesas Electronics America Inc
NP36P04KDG-E1-AY

Renesas Electronics America Inc

MOSFET P-CH 40V 36A TO263

NP36P04KDG-E1-AY is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET P-CH 40V 36A TO263. Key specifications: mounting type Surface Mount, operating temperature 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

In Stock: 1,869

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs17mOhm @ 18A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 56W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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