Name: NP100P06PDG-E1-AY
Brand: Renesas Electronics America Inc
SKU: NP100P06PDG-E1-AY
Price: 4.70 USD
Availability: InStock

REF: NP100P06PDG-E1-AY Renesas Electronics America Inc

NP100P06PDG-E1-AY

Renesas Electronics America Inc

MOSFET P-CH 60V 100A TO263

NP100P06PDG-E1-AY is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET P-CH 60V 100A TO263. Key specifications: mounting type Surface Mount, operating temperature 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 1,809

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	300 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	15000 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 200W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB