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NESG3031M14-T3-A

In Stock: 3,539
NESG3031M14-T3-A - Renesas Electronics America Inc - Transistors - Bipolar (BJT) - RF
REF: NESG3031M14-T3-A Renesas Electronics America Inc
NESG3031M14-T3-A

Renesas Electronics America Inc

RF SMALL SIGNAL TRANSISTOR

NESG3031M14-T3-A is a Transistors - Bipolar (BJT) - RF manufactured by Renesas Electronics America Inc. RF SMALL SIGNAL TRANSISTOR. Key specifications: mounting type Surface Mount, package / case 4-SMD, Flat Leads, current - collector (ic) (max) 35mA, power - max 150mW.

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In Stock: 3,539

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)4.3V
Frequency - Transition-
Noise Figure (dB Typ @ f)0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz
Gain7.5dB ~ 16dB
Power - Max150mW
DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 6mA, 2V
Current - Collector (Ic) (Max)35mA
Operating Temperature-
Mounting TypeSurface Mount
Package / Case4-SMD, Flat Leads
Supplier Device Package4L2MM, M14

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