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NESG2101M05-T1-A

In Stock: 9,000
NESG2101M05-T1-A - Renesas Electronics America Inc - Transistors - Bipolar (BJT) - RF
REF: NESG2101M05-T1-A Renesas Electronics America Inc
NESG2101M05-T1-A

Renesas Electronics America Inc

NESG2101 - NPN SIGE RF TRANSISTO

NESG2101M05-T1-A is a Transistors - Bipolar (BJT) - RF manufactured by Renesas Electronics America Inc. NESG2101 - NPN SIGE RF TRANSISTO. Key specifications: mounting type Surface Mount, package / case SOT-343F, current - collector (ic) (max) 100mA, power - max 500mW.

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In Stock: 9,000

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5V
Frequency - Transition17GHz
Noise Figure (dB Typ @ f)0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
Gain11dB ~ 19dB
Power - Max500mW
DC Current Gain (hFE) (Min) @ Ic, Vce130 @ 15mA, 2V
Current - Collector (Ic) (Max)100mA
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseSOT-343F
Supplier Device PackageM05

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