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NESG2031M05-T1-A

In Stock: 34,528
NESG2031M05-T1-A - Renesas Electronics America Inc - Transistors - Bipolar (BJT) - RF
REF: NESG2031M05-T1-A Renesas Electronics America Inc
NESG2031M05-T1-A

Renesas Electronics America Inc

NESG2031 - NPN SIGE RF TRANSISTO

NESG2031M05-T1-A is a Transistors - Bipolar (BJT) - RF manufactured by Renesas Electronics America Inc. NESG2031 - NPN SIGE RF TRANSISTO. Key specifications: mounting type Surface Mount, package / case SOT-343F, current - collector (ic) (max) 35mA, power - max 175mW.

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In Stock: 34,528

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5V
Frequency - Transition25GHz
Noise Figure (dB Typ @ f)0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz
Gain10dB ~ 17dB
Power - Max175mW
DC Current Gain (hFE) (Min) @ Ic, Vce130 @ 5mA, 2V
Current - Collector (Ic) (Max)35mA
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseSOT-343F
Supplier Device PackageM05

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