N0600N-S17-AY - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: N0600N-S17-AY Renesas Electronics America Inc
N0600N-S17-AY

Renesas Electronics America Inc

MOSFET N-CH 60V 30A TO220

N0600N-S17-AY is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 60V 30A TO220. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3 Isolated Tab.

In Stock: 22,000

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs36mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs29.8 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1380 pF @ 10 V
FET Feature-
Power Dissipation (Max)2W (Ta), 20W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3 Isolated Tab

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